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Ukucutshungulwa Kwenziwe Ngokwezifiso kwe-Al2O3 Ceramic Wafer Chuck
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Ipuleti leCeramic le-ST.CERA elenziwe ngokwezifiso le-Semiconductor Equipment
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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I-Alumina Vacuum Chuck engu-12-Inch Yokucubungula I-Wafer engu-300mm
I-vacuum chuck kaSt.Cera engamasentimitha angu-12 yenziwe ngokunemba kusuka ku-99.8% high-purity alumina (Al₂O₃) yokuphatha i-wafer engu-300mm. I-chuck inendawo egobile kahle (ububanzi be-groove obungu-0.5–1.0 mm, i-pitch engu-2–3 mm) ukuqinisekisa ukusatshalaliswa kwe-vacuum okufanayo kuyo yonke ububanzi obungu-300mm. Ukuthamba kugcinwa ngaphakathi kwama-5 μm, okuvumela ukuqina kwe-wafer engenama-warp ngesikhathi sokusika, ukugaya ngemuva, nokuhlolwa. Amandla aphezulu okugoba (361 MPa) kanye nobunzima (16 GPa) kuqinisekisa ukuzinza kwesikhathi eside ngisho nangaphansi kwemijikelezo ye-vacuum ephindaphindwayo.
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I-Alumina Ceramic End Effector eneziteshi ze-Vacuum ezihlanganisiwe
I-St.Cera's alumina vacuum end effector ihlanganisa iziteshi ze-vacuum ezisebenza ngomshini oqondile kanye nezimbobo zokumunca ngqo emzimbeni we-alumina ohlanzekile ophezulu ongu-99.8%. Lo mklamo ususa ama-vacuum pad angaphandle, okwenza kube lula ukuthathwa kwe-wafer ngqo ngamandla afanayo okubamba. Amandla aphezulu okugoba (361 MPa) kanye nobunzima (16 GPa) kuqinisekisa ukuzinza kwesikhathi eside ngaphansi kwemijikelezo ye-vacuum ephindaphindwayo. Ukuthamba endaweni ye-pad kugcinwa ngaphakathi kwama-10 μm, okuvimbela ukucindezeleka kwe-wafer kanye nokuphuka. Ama-vacuum port atholakala ku-flange yokufaka yangemuva ukuze kube lula ukuhlanganiswa nezingalo zerobhothi ze-OEM.
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Izingxenye ze-Ceramic ze-Alumina eziphephile ze-ESD zokuphathwa kwe-Wafer ebucayi neqinile
Izingxenye ze-alumina eziphephile ze-St.Cera's ESD (electrostatic discharge) ceramic zenziwe nge-99.8% high-purity Al₂O₃ enokumelana okuphezulu okulungiselelwe okungu-10⁶–10⁹ Ω/sq, okufezwa ngenqubo yokwelapha noma yokumboza. Lezi zingxenye zisusa ngempumelelo ishaja eqhubekayo, zivimbela ukulimala kwe-electrostatic kuma-wafers e-semiconductor abucayi namadivayisi. Izinto eziyisisekelo zigcina amandla azo aphezulu okugobeka (361 MPa), ubulukhuni (16 GPa), kanye namandla e-dielectric (15×10⁶ V/m). Izingxenye ze-ceramic eziphephile ze-ESD zifaka phakathi ama-end effectors, ama-lift pins, ama-guide rails, kanye nezinto ezenziwe ngokwezifiso zokwenza i-FAB automation.
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Izingxenye Ezisele Ze-Ceramic Zemishini Yokuhlola I-Semiconductor
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Isithwali Semishini Ye-Semiconductor Yepuleti Le-Ceramic
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Imishini Ye-Semiconductor Izingxenye Ezisele Ze-Ceramic
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Indandatho Yophawu Lwe-Alumina Ceramic Ehlanzekile Kakhulu Yokuvalwa Kwegumbi Eliphezulu Lokushisa
Indandatho yokuvala ye-ceramic kaSt.Cera yakhelwe njengendlela ehlukile kuma-polymer O-rings ezindaweni ezibucayi lapho ama-elastomer ewohloka khona. Yakhiwe nge-99.8% i-alumina ehlanzekile kakhulu (i-Al₂O₃), le ndandatho yokuvala eqinile isetshenziswa ekusetshenzisweni kokuvala okungaguquki — ngokuvamile ehambisana ne-gasket yensimbi ethambile noma ye-graphite — ukuhlinzeka nge-vacuum noma igesi ethembekile emazingeni okushisa afinyelela ku-800°C nasezindaweni ezinolaka ze-plasma noma zamakhemikhali. Izinto ezibonakalayo azinawo umoya ophumayo, amandla aphezulu okucindezela (amandla angaphansi kwe-flexural 361 MPa), kanye nokungasebenzi kahle kwamakhemikhali (okumelana nama-halogen, ama-acid, nama-alkali ngaphandle kwe-HF). Izindawo zokuvala ezihambisana kahle (ukuthamba ≤5 μm, ukugoba kobuso i-Ra ≤0.2 μm) ziqinisekisa ukuthintana okuqinile nokuvuza nezinsimbi zokuhlangana noma izingxenye ze-ceramic.
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Indandatho Yokugxila Kwegumbi Le-Alumina Elihlanzekile Kakhulu Yezinhlelo Zokubumbana Kwe-Plasma kanye Ne-CVD
Indandatho yokugxila kwegumbi likaSt.Cera iyisici esibalulekile sekhithi yenqubo esetshenziswa emishinini ye-plasma etch, CVD, kanye ne-PVD semiconductor. Yenziwe nge-99.8% high-purity alumina (Al₂O₃), indandatho izungeza umphetho we-wafer ukuze ivalele i-plasma futhi ithuthukise ukusatshalaliswa kwe-ion angular, ngaleyo ndlela ithuthukise ukufana kwe-etch kuyo yonke indawo ye-wafer. Izinto ezisetshenziswayo zinikeza ukumelana kwe-plasma okumangalisayo, amandla aphezulu e-dielectric (15×10⁶ V/m), kanye nokuqina kokushisa kuze kufike ku-1600°C, okuqinisekisa ukuthembeka kwesikhathi eside ezindaweni ze-plasma ezisekelwe ku-fluorine noma i-chlorine. I-ID/OD ephansi eqondile kanye ne-flatness (≤10 μm) kuvumela ukubeka umphetho we-wafer ngendlela enembile, kunciphisa amaphutha omphetho kanye nokukhiqizwa kwezinhlayiya.
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Indandatho ye-Ceramic ye-Alumina Ehlanzekile Ephezulu Yezindawo Zokusebenza Ze-CVD / PVD
Indandatho ye-ceramic kaSt.Cera yenzelwe ngqo ukusetshenziswa kumakamelo okucubungula e-CVD (Chemical Vapor Deposition) kanye ne-PVD (Physical Vapor Deposition). Yenziwe nge-99.8% high-purity alumina (Al₂O₃), le ndandatho isebenza njenge-chamber liner, i-focus ring, noma ingxenye ye-process kit ukuvimba i-plasma nokuvikela izindonga zechamber ekugugulekeni. Izinto ezisetshenziswayo zinikeza ukumelana okuhle kwe-plasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kanye nokuqina kokushisa okufika ku-1600°C, okuqinisekisa impilo ende yenkonzo ezindaweni ze-plasma ezisekelwe ku-fluorine. Ukubekezelelana okuqondile kobukhulu (±0.05 mm ku-ID/OD) kanye nokuthamba (≤10 μm) kuvumela ukubeka umphetho we-wafer okuhambisanayo, ukuthuthukisa ukufana kokubekwa kanye nokunciphisa ukukhiqizwa kwezinhlayiya.
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I-Bernoulli Ceramic End Effector — Ukuphathwa Kwe-Wafer Okungathintani Nama-Wafer Amancane Nabuthakathaka
I-St.Cera's Bernoulli ceramic end effector isebenzisa i-aerodynamic lift ukuphatha ama-wafer ngaphandle kokuthintana ngokomzimba. Yenziwe nge-high-purity 99.8% alumina (Al₂O₃) noma i-silicon carbide (SiC), inama-nozzles acutshungulwe kahle akhipha igesi ecindezelwe ukuze kudalwe ifilimu yomoya omncane phakathi kwe-effector yokugcina kanye ne-wafer. Lesi simiso sokungathintani siqeda ukungcola kwangemuva, ukuqhekeka komphetho, kanye nomonakalo womphezulu, okwenza kube kuhle kuma-wafer amancane (≤100 μm), abuthakathaka, noma agobile. I-substrate ye-ceramic inikeza amandla aphezulu okuguquguquka (361 MPa ye-Al₂O₃; kufika ku-550–600 MPa ye-SiC), isisindo esiphansi, kanye nokuzinza okuhle kakhulu, okuqinisekisa indawo ephindaphindwayo kumarobhothi okudlulisa ama-wafer asheshayo.
