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Customized Processing of Al2O3 Ceramic Wafer Chuck
Formed by cold isostatic pressing and sintered under high temperature, then precision machined and polished, the ceramic spare parts can meet any strict requirements of semiconductor equipment with its features of wear resistance, corrosion resistance, low thermal expansion, and insulation. Ceramics can work in many kinds of semiconductor production equipment with condition of high temperature, vacuum or corrosive gas for a long time.
Made from high-purity alumina powder, processed by cold isostatic pressing, high temperature sintering and precision finishing, it could reach the dimension tolerance to ±0.001 mm, surface finish Ra 0.1, temperature resistance 1600℃.
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ST.CERA Customized Semiconductor Equipment Ceramic Plate
Formed by cold isostatic pressing and sintered under high temperature, then precision machined and polished, the ceramic spare parts can meet any strict requirements of semiconductor equipment with its features of wear resistance, corrosion resistance, low thermal expansion, and insulation. Ceramics can work in many kinds of semiconductor production equipment with condition of high temperature, vacuum or corrosive gas for a long time.
Made from high-purity alumina powder, processed by cold isostatic pressing, high temperature sintering and precision finishing, it could reach the dimension tolerance to ±0.001 mm, surface finish Ra 0.1, temperature resistance 1600℃.
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12-Inch Alumina Vacuum Chuck for 300mm Wafer Processing
St.Cera’s 12-inch vacuum chuck is precision-engineered from 99.8% high-purity alumina (Al₂O₃) for 300mm wafer handling. The chuck features a fine-grooved surface (groove width 0.5–1.0 mm, pitch 2–3 mm) to ensure uniform vacuum distribution across the entire 300mm diameter. Flatness is maintained within 5 μm, enabling warp-free wafer fixation during dicing, backside grinding, and inspection. The material’s high flexural strength (361 MPa) and hardness (16 GPa) guarantee long-term dimensional stability even under repeated vacuum cycles.
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Alumina Ceramic End Effector with Integrated Vacuum Channels
St.Cera’s alumina vacuum end effector integrates precision-machined vacuum channels and suction holes directly into the 99.8% high-purity alumina body. This design eliminates external vacuum pads, enabling direct wafer pickup with uniform holding force. The material’s high flexural strength (361 MPa) and hardness (16 GPa) ensure long-term dimensional stability under repeated vacuum cycles. Flatness across the pad area is maintained within 10 μm, preventing wafer stress and breakage. Vacuum ports are located at the rear mounting flange for easy integration with OEM robot arms.
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ESD-Safe Alumina Ceramic Parts for Static-Sensitive Wafer Handling
St.Cera’s ESD (electrostatic discharge) safe alumina ceramic parts are manufactured from 99.8% high-purity Al₂O₃ with a tailored surface resistivity of 10⁶–10⁹ Ω/sq, achieved through a proprietary doping or coating process. These parts effectively dissipate static charge, preventing electrostatic damage to sensitive semiconductor wafers and devices. The base material retains its high flexural strength (361 MPa), hardness (16 GPa), and dielectric strength (15×10⁶ V/m). ESD-safe ceramic parts include end effectors, lift pins, guide rails, and custom fixtures for FAB automation.
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Ceramic Spare Parts for Semiconductor Probe Equipment
Formed by cold isostatic pressing and sintered under high temperature, then precision machined and polished, the ceramic spare parts can meet any strict requirements of semiconductor equipment with its features of wear resistance, corrosion resistance, low thermal expansion, and insulation. Ceramics can work in many kinds of semiconductor production equipment with condition of high temperature, vacuum or corrosive gas for a long time.
Made from high-purity alumina powder, processed by cold isostatic pressing, high temperature sintering and precision finishing, it could reach the dimension tolerance to ±0.001 mm, surface finish Ra 0.1, temperature resistance 1600℃.
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Ceramic Plate Semiconductor Equipment Carrier
Formed by cold isostatic pressing and sintered under high temperature, then precision machined and polished, the ceramic spare parts can meet any strict requirements of semiconductor equipment with its features of wear resistance, corrosion resistance, low thermal expansion, and insulation. Ceramics can work in many kinds of semiconductor production equipment with condition of high temperature, vacuum or corrosive gas for a long time.
Made from high-purity alumina powder, processed by cold isostatic pressing, high temperature sintering and precision finishing, it could reach the dimension tolerance to ±0.001 mm, surface finish Ra 0.1, temperature resistance 1600℃.
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Semiconductor Equipment Ceramic Spare Parts
Formed by cold isostatic pressing and sintered under high temperature, then precision machined and polished, the ceramic spare parts can meet any strict requirements of semiconductor equipment with its features of wear resistance, corrosion resistance, low thermal expansion, and insulation. Ceramics can work in many kinds of semiconductor production equipment with condition of high temperature, vacuum or corrosive gas for a long time.
Made from high-purity alumina powder, processed by cold isostatic pressing, high temperature sintering and precision finishing, it could reach the dimension tolerance to ±0.001 mm, surface finish Ra 0.1, temperature resistance 1600℃.
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High-Purity Alumina Ceramic Seal Ring for High-Temperature Chamber Sealing
St.Cera‘s ceramic seal ring is designed as an alternative to polymer O-rings in extreme environments where elastomers degrade. Manufactured from 99.8% high-purity alumina (Al₂O₃), this rigid seal ring is used in static sealing applications — typically paired with a soft metal or graphite gasket — to provide reliable vacuum or gas containment at temperatures up to 800°C and in aggressive plasma or chemical environments. The material offers zero outgassing, high compressive strength (underlying flexural strength 361 MPa), and chemical inertness (resistant to halogens, acids, and alkalis except HF). Precision-lapped sealing surfaces (flatness ≤5 μm, surface roughness Ra ≤0.2 μm) ensure leak-tight contact with mating metal or ceramic components.
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High-Purity Alumina Chamber Focus Ring for Plasma Etch & CVD Systems
St.Cera‘s chamber focus ring is a critical process kit component used in plasma etch, CVD, and PVD semiconductor equipment. Manufactured from 99.8% high-purity alumina (Al₂O₃), the ring surrounds the wafer edge to confine plasma and optimize ion angular distribution, thereby improving etch uniformity across the wafer surface. The material offers exceptional plasma resistance, high dielectric strength (15×10⁶ V/m), and thermal stability up to 1600°C, ensuring long-term reliability in aggressive fluorine- or chlorine-based plasma environments. Precision-ground ID/OD and flatness (≤10 μm) enable accurate wafer edge positioning, reducing edge defects and particle generation.
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High-Purity Alumina Ceramic Ring for CVD / PVD Process Chambers
St.Cera‘s ceramic ring is specifically designed for use in CVD (Chemical Vapor Deposition) and PVD (Physical Vapor Deposition) process chambers. Manufactured from 99.8% high-purity alumina (Al₂O₃), this ring serves as a chamber liner, focus ring, or process kit component to confine plasma and protect chamber walls from erosion. The material offers excellent plasma resistance, high dielectric strength (15×10⁶ V/m), and thermal stability up to 1600°C, ensuring long service life in aggressive fluorine-based plasma environments. Precise dimensional tolerances (±0.05 mm on ID/OD) and flatness (≤10 μm) enable consistent wafer edge positioning, improving deposition uniformity and reducing particle generation.
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Bernoulli Ceramic End Effector — Non-Contact Wafer Handling for Thin & Fragile Wafers
St.Cera‘s Bernoulli ceramic end effector uses aerodynamic lift to handle wafers without physical contact. Manufactured from high-purity 99.8% alumina (Al₂O₃) or silicon carbide (SiC), it features precision-machined nozzles that eject pressurized gas to create a thin air film between the end effector and the wafer. This non-contact principle eliminates backside contamination, edge chipping, and surface damage, making it ideal for thin (≤100 μm), fragile, or warped wafers. The ceramic substrate provides high flexural strength (361 MPa for Al₂O₃; up to 550–600 MPa for SiC), low mass, and excellent dimensional stability, ensuring repeatable positioning in high-speed wafer transfer robots.
