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High-Purity Alumina Ceramic Ring for CVD / PVD Process Chambers

High-Purity Alumina Ceramic Ring for CVD / PVD Process Chambers

Short Description:

St.Cera‘s ceramic ring is specifically designed for use in CVD (Chemical Vapor Deposition) and PVD (Physical Vapor Deposition) process chambers. Manufactured from 99.8% high-purity alumina (Al₂O₃), this ring serves as a chamber liner, focus ring, or process kit component to confine plasma and protect chamber walls from erosion. The material offers excellent plasma resistance, high dielectric strength (15×10⁶ V/m), and thermal stability up to 1600°C, ensuring long service life in aggressive fluorine-based plasma environments. Precise dimensional tolerances (±0.05 mm on ID/OD) and flatness (≤10 μm) enable consistent wafer edge positioning, improving deposition uniformity and reducing particle generation.


Product Detail

Product Tags

St.Cera‘s ceramic ring is specifically designed for use in CVD (Chemical Vapor Deposition) and PVD (Physical Vapor Deposition) process chambers. Manufactured from 99.8% high-purity alumina (Al₂O₃), this ring serves as a chamber liner, focus ring, or process kit component to confine plasma and protect chamber walls from erosion. The material offers excellent plasma resistance, high dielectric strength (15×10⁶ V/m), and thermal stability up to 1600°C, ensuring long service life in aggressive fluorine-based plasma environments. Precise dimensional tolerances (±0.05 mm on ID/OD) and flatness (≤10 μm) enable consistent wafer edge positioning, improving deposition uniformity and reducing particle generation.

 

Specifications (based on 99.8% Al₂O₃):

Property Value
Material 99.8% Alumina (Ivory)
Density 3.93 g/cm³
Water Absorption 0%
Flexural Strength 361 MPa
Fracture Toughness 3–4 MPa·m¹/²
Vickers Hardness 16 GPa
Young’s Modulus 380 GPa
Thermal Conductivity 32 W/m·k
Thermal Expansion (25–1000°C) 7.2×10⁻⁶/℃
Dielectric Strength 15×10⁶ V/m
Specific Resistance >10¹⁴ Ω·cm
Max Operating Temperature 1600°C

 

Applications:

  • · CVD chamber focus rings and edge rings
  • · PVD chamber shield rings and clamp rings
  • · Etch chamber liners and cover rings
  • · Plasma confinement rings in dielectric etch systems

 

Manufacturing Process:

Isostatic pressing → green machining → sintering at 1600°C → CNC ID/OD grinding → surface lapping → ultrasonic cleaning → 100% CMM inspection. Ultra-smooth surface finish (Ra ≤0.4 μm) minimizes particle adhesion.

 

Quality Control:

  • · 100% dimensional check (ID, OD, thickness, flatness)
  • · Dye penetrant inspection for surface micro-cracks
  • · Dielectric strength test per ASTM D149
  • · No visible discoloration or porosity under 20× microscope

 

Advantages over Metal or Quartz Rings:

  • · 5–10× longer lifetime than aluminum rings in fluorine plasma
  • · No metal contamination in thin films
  • · Higher plasma resistance than quartz (no erosion pits)
  • · Maintains electrical insulation >10¹⁴ Ω·cm even after long-term use

 

Alternative Material — Silicon Nitride (SiN):

For applications requiring even higher fracture toughness (6.2 MPa·m¹/²) and better thermal shock resistance (expansion coefficient 3.2×10⁻⁶/℃), Si₃N₄ rings are available. However, alumina is more cost-effective for most CVD/PVD applications. Please specify material preference when ordering.

 

Customization:

  • · Through-holes, stepped profiles, or counterbores for mounting
  • · Y₂O₃-coated surface for enhanced plasma resistance (optional)
  • · Laser engraving of part number / lot code

 

Note: The above data strictly follows the supplied Al₂O₃ property table. For Si₃N₄ rings, refer to the separate Si₃N₄ datasheet provided.


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