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High-Purity Alumina Ceramic Parts for Semiconductor & Industrial Applications
St.Cera manufactures precision-machined alumina (Al₂O₃) ceramic parts to customer specifications. Using 99.8% high-purity alumina, these components deliver excellent flexural strength (361 MPa), high hardness (16 GPa), and outstanding dielectric strength (15×10⁶ V/m). Designed for semiconductor equipment, wear-resistant assemblies, electrical insulators, and high-temperature fixtures, the material offers near-zero water absorption (0%) and a thermal expansion coefficient of 7.2×10⁻⁶/℃, ensuring dimensional stability under extreme conditions.
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Porous Ceramic Vacuum Chuck for Warped Wafer Handling
St.Cera’s porous ceramic chuck is engineered from high-purity alumina with a uniform open porosity of 30–45% and pore sizes ranging from 10 to 100 μm. Unlike conventional grooved chucks, the porous surface provides distributed vacuum across the entire wafer backside, effectively holding warped, thin, or singulated wafers without edge lift-off or breakage. The gentle vacuum (adjustable via restrictor) also prevents backside marking.
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Alumina-Based Porous Ceramic Vacuum Chuck for Thin Wafer Handling
St.Cera’s alumina-based porous chuck is fabricated from 99.6% high-purity Al₂O₃ with controlled open porosity of 30–45% and uniform pore size ranging from 10 to 50 μm. Unlike grooved chucks, the porous surface provides distributed vacuum across the entire wafer backside, eliminating edge marking and enabling gentle holding of ultra-thin (≤100 μm) or warped wafers. The material offers flexural strength ≥250 MPa and thermal stability up to 400°C in air.
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Alumina Gas Distribution Plate for CVD/PVD Showerhead
St.Cera’s gas distribution plate (showerhead) is precision-machined from high-purity 99.8% alumina ceramic. It features an array of micro-holes (diameters 0.3–1.5 mm) that ensure uniform gas flow across the wafer surface during CVD, PVD, or ALD processes. The plate’s high dielectric strength (>15×10⁶ V/m) and plasma resistance make it essential for semiconductor thin-film deposition.
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Ceramic Supporting Pin for Semiconductor Process Fixtures
St.Cera’s ceramic supporting pins (also known as lift pins or support pins) are used in semiconductor process chambers to elevate wafers or substrates during handling, heating, or cooling. Manufactured from 99.8% alumina or silicon nitride, these pins offer high compressive strength, thermal stability, and chemical resistance. The hemispherical or flat tip design prevents wafer scratching.
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Precision Ceramic Guiding Tube for Wire Bonding & Die Attach
St.Cera’s ceramic guiding tube is manufactured from 99.5% alumina or yttria-stabilized zirconia, offering high wear resistance and a smooth inner bore (Ra ≤0.2 μm). These tubes are critical components in wire bonders, die attach machines, and pick-and-place equipment, guiding bonding wires, capillaries, or vacuum nozzles with minimal friction and zero particle contamination.
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Teflon Coated Ceramic End Effector – Non-Stick Surface for Sensitive Wafer Handling
St.Cera’s Teflon (PTFE) coated ceramic end effector combines a high-strength alumina substrate with a uniform, low-friction PTFE coating (thickness 15–30 μm). The coating provides an extremely low coefficient of friction (≤0.1), excellent chemical resistance, and non-stick properties, preventing wafer adhesion and eliminating backside contamination. The underlying ceramic substrate (99.8% Al₂O₃) offers high flexural strength (361–1000 MPa), wear resistance, and thermal stability up to 260°C (coating limit). This end effector is ideal for handling delicate, thin, or sticky wafers (e.g., after photoresist coating or chemical processes).
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High-Purity Alumina Ceramic Core for Semiconductor Fixtures
St.Cera’s alumina ceramic core is precision formed from 99.8% high-purity Al₂O₃, offering exceptional dielectric strength (15×10⁶ V/m), thermal stability up to 1600°C, and creep resistance under load. These cores are used as structural components in high-temperature process fixtures, heater bases, plasma chamber liners, and electrical insulators. The material’s high hardness (16 GPa) and low water absorption (0%) ensure long-term reliability in harsh environments.
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Alumina-Based Standard Vacuum Chuck – High Rigidity for Precision Machining
This alumina-based vacuum chuck is manufactured from 99.8% Al₂O₃, offering a smooth non-porous surface with custom vacuum groove patterns. It provides exceptional rigidity (Young’s modulus 380 GPa) and flatness (≤3 μm), making it ideal for precision grinding, lapping, and dicing of semiconductor wafers and optical components. The material’s high thermal conductivity (32 W/m·k) ensures temperature uniformity during processing.
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ST.CERA Customized for Alumina Ceramic Ring and Ceramic Disc
Formed by cold isostatic pressing and sintered under high temperature, then precision machined and polished, the ceramic spare parts can meet any strict requirements of semiconductor equipment with its features of wear resistance, corrosion resistance, low thermal expansion, and insulation. Ceramics can work in many kinds of semiconductor production equipment with condition of high temperature, vacuum or corrosive gas for a long time.
Made from high-purity alumina powder, processed by cold isostatic pressing, high temperature sintering and precision finishing, it could reach the dimension tolerance to ±0.001 mm, surface finish Ra 0.1, temperature resistance 1600℃.
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Precision Ceramic Chuck Semiconductor Equipment
Formed by cold isostatic pressing and sintered under high temperature, then precision machined and polished, the ceramic spare parts can meet any strict requirements of semiconductor equipment with its features of wear resistance, corrosion resistance, low thermal expansion, and insulation. Ceramics can work in many kinds of semiconductor production equipment with condition of high temperature, vacuum or corrosive gas for a long time.
Made from high-purity alumina powder, processed by cold isostatic pressing, high temperature sintering and precision finishing, it could reach the dimension tolerance to ±0.001 mm, surface finish Ra 0.1, temperature resistance 1600℃.
