-
Ukucutshungulwa okwenziwe ngokwezifiso kwe-Al2O3 Ceramic Wafer Chuck
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
-
Ipleyiti yeCeramic yezixhobo zeSemiconductor ezenziwe ngokwezifiso ze-ST.CERA
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
-
I-Alumina Vacuum Chuck eyi-12-intshi yokucubungula i-Wafer eyi-300mm
I-vacuum chuck ye-St.Cera eyi-intshi ezili-12 yenziwe ngokuchanekileyo nge-99.8% ye-alumina ephezulu ecocekileyo (Al₂O₃) yokuphatha i-wafer ye-300mm. I-chuck inomphezulu ogobileyo (ububanzi be-groove buyi-0.5–1.0 mm, i-pitch 2–3 mm) ukuqinisekisa ukusasazwa kwe-vacuum okufanayo kuyo yonke i-300mm ububanzi. Ukuthamba kugcinwa ngaphakathi kwe-5 μm, okuvumela ukufakwa kwe-wafer engena-warp ngexesha lokusika, ukugaya ngasemva, kunye nokuhlolwa. Amandla aphezulu e-flexural (361 MPa) kunye nobunzima (16 GPa) kuqinisekisa uzinzo lwexesha elide nangona kujikelezwa i-vacuum rhoqo.
-
Isiphumo Sokugqibela seCeramic seAlumina esineeChannels eziDibeneyo zeVacuum
Isixhobo sokuphelisa i-alumina seSt.Cera sidibanisa imijelo ye-vacuum eyenziwe ngomatshini ochanekileyo kunye nemingxunya yokufunxa ngqo emzimbeni we-alumina ococekileyo ophezulu we-99.8%. Olu yilo lususa ii-vacuum pads zangaphandle, nto leyo evumela ukuba i-wafer ithathwe ngqo ngamandla afanayo okubamba. Amandla aphezulu e-flexural (361 MPa) kunye nobunzima (16 GPa) kuqinisekisa uzinzo oluhlala ixesha elide phantsi kwemijikelo ye-vacuum ephindaphindwayo. Ukuthamba kwindawo ye-pad kugcinwa ngaphakathi kwe-10 μm, okuthintela uxinzelelo lwe-wafer kunye nokuqhekeka. Ii-vacuum ports zibekwe kwi-flange yokuqhoboshela ngasemva ukuze kube lula ukudibanisa neengalo zerobhothi ze-OEM.
-
Izixhobo zeCeramic ze-Alumina eziKhuselekileyo ze-ESD zoLawulo lweWafer oluSensitive-Sensitive
Izixhobo ze-alumina ezikhuselekileyo zeSt.Cera's ESD (electrostatic discharge) zenziwe nge-99.8% ye-Al₂O₃ ecocekileyo kakhulu enokumelana nomphezulu okwenzelwe wena we-10⁶–10⁹ Ω/sq, efumaneka ngenkqubo yokusetyenziswa kwe-doping okanye yokugquma. Ezi zixhobo zisusa ngempumelelo itshaja engashukumiyo, zithintela umonakalo we-electrostatic kwii-wafers ze-semiconductor ezibuthathaka kunye nezixhobo. Izinto ezisisiseko zigcina amandla azo aphezulu e-flexural (361 MPa), ubunzima (16 GPa), kunye namandla e-dielectric (15×10⁶ V/m). Izixhobo ze-ceramic ezikhuselekileyo ze-ESD ziquka izixhobo zokugqibela, iiphini zokuphakamisa, iireyile zesikhokelo, kunye nezixhobo ezenziwe ngokwezifiso ze-FAB automation.
-
Izixhobo zeCeramic zeSemiconductor Probe Equipment
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
-
Isithwali sezixhobo zeSemiconductor zeCeramic Plate
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
-
Izixhobo zeSemiconductor Izixhobo zeCeramic
Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.
Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.
-
Indandatho yeSeal ye-Alumina Ceramic ecocekileyo kakhulu yokutywinwa kwegumbi lobushushu obuphezulu
Indandatho yesitywino se-ceramic yaseSt.Cera yenzelwe njengendlela eyahlukileyo kwiindandatho ze-polymer O kwiindawo ezigqithisileyo apho ii-elastomers ziwohloka khona. Yenziwe nge-99.8% ye-alumina ecocekileyo kakhulu (Al₂O₃), le ndandatho yesitywino eqinileyo isetyenziswa kwiindawo zokutywina ezingashukumiyo — zihlala zidibene ne-gasket yesinyithi ethambileyo okanye i-graphite — ukubonelela nge-vacuum okanye i-gas containment ethembekileyo kumaqondo obushushu afikelela kwi-800°C nakwiindawo ezirhabaxa ze-plasma okanye zeekhemikhali. Le nto ayiniki gesi iphumayo, amandla aphezulu okuxinzelela (amandla angaphantsi e-flexural 361 MPa), kunye nokungasebenzi kakuhle kweekhemikhali (ukuxhathisa ii-halogens, ii-acids, kunye ne-alkalis ngaphandle kwe-HF). Iindawo zokutywina ezifakwe ngokuchanekileyo (ukuthe tyaba ≤5 μm, ukurhabaxa komphezulu we-Ra ≤0.2 μm) ziqinisekisa ukudibana okuqinileyo nentsimbi edibanayo okanye izinto ze-ceramic.
-
Indandatho yokugxila yeChamber ye-Alumina ecocekileyo kakhulu yePlasma Etch kunye neeNkqubo zeCVD
Iring yokugxila kwigumbi likaSt.Cera yinxalenye ebalulekileyo yekhithi yenkqubo esetyenziswa kwizixhobo ze-plasma etch, CVD, kunye ne-PVD semiconductor. Yenziwe nge-99.8% ye-high-purity alumina (Al₂O₃), le ring ijikeleza umphetho we-wafer ukuze ivalele i-plasma kwaye iphucule ukusasazwa kwe-ion angular, ngaloo ndlela iphucula ukufana kwe-etch kumphezulu we-wafer. Le nto inika ukumelana okugqwesileyo kwe-plasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kunye nozinzo lobushushu ukuya kuthi ga kwi-1600°C, iqinisekisa ukuthembeka kwexesha elide kwiindawo ze-plasma ezisekelwe kwi-fluorine okanye kwi-chlorine. I-Precision-ground ID/OD kunye ne-flatness (≤10 μm) zenza kube lula ukubeka umphetho we-wafer ngokuchanekileyo, ukunciphisa iziphene zomphetho kunye nokuveliswa kwamasuntswana.
-
Indandatho yeCeramic ye-Alumina ecocekileyo ephezulu yeeCandelo zeNkqubo zeCVD / PVD
Indandatho yeseramikhi yaseSt.Cera yenzelwe ngokukodwa ukusetyenziswa kwiigumbi zenkqubo zeCVD (Chemical Vapor Deposition) kunye nePVD (Physical Vapor Deposition). Yenziwe nge-99.8% ye-alumina ephezulu-ecocekileyo (Al₂O₃), le ndandatho isebenza njenge-chamber liner, i-focus ring, okanye icandelo le-process kit ukuvala iplasma kunye nokukhusela iindonga zegumbi ekukhukulisekeni. Le nto inika ukumelana okuhle kweplasma, amandla aphezulu e-dielectric (15×10⁶ V/m), kunye nozinzo lobushushu ukuya kuthi ga kwi-1600°C, iqinisekisa ubomi obude kwiindawo zeplasma ezisekelwe kwi-fluorine. Ukunyamezelana okuchanekileyo (±0.05 mm kwi-ID/OD) kunye nokuthamba (≤10 μm) kuvumela ukubeka umda we-wafer rhoqo, ukuphucula ukufana kwe-deposition kunye nokunciphisa ukuveliswa kwamasuntswana.
-
I-Bernoulli Ceramic End Effector — Ukuphathwa kweWafer engadibaniyo kwiiWafers ezibhityileyo nezibuthathaka
I-St.Cera's Bernoulli ceramic end effector isebenzisa i-aerodynamic lift ukuphatha ii-wafers ngaphandle kokudibana ngokwasemzimbeni. Yenziwe nge-high-purity 99.8% alumina (Al₂O₃) okanye i-silicon carbide (SiC), inee-nozzles ezichanekileyo ezikhupha igesi ecinezelweyo ukwenza ifilimu yomoya encinci phakathi kwe-end effector kunye ne-wafer. Lo mgaqo wokungadibani ususa ungcoliseko lwangasemva, ukuqhekeka komphetho, kunye nomonakalo womphezulu, okwenza ukuba ilungele ii-wafers ezincinci (≤100 μm), ezibuthathaka, okanye ezigobileyo. I-substrate ye-ceramic inika amandla aphezulu okugoba (361 MPa ye-Al₂O₃; ukuya kuthi ga kwi-550–600 MPa ye-SiC), ubunzima obuphantsi, kunye nozinzo oluhle kakhulu, ukuqinisekisa indawo ephindaphindwayo kwiirobhothi zokudlulisa ii-wafer ezikhawulezayo.
