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Kayayyaki

  • Musamman sarrafa Al2O3 yumbu Wafer Chuck

    Musamman sarrafa Al2O3 yumbu Wafer Chuck

    An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.

    An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.

  • Kayan aikin Semiconductor na musamman na ST.CERA Farantin yumbu

    Kayan aikin Semiconductor na musamman na ST.CERA Farantin yumbu

    An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.

    An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.

  • Akwatin injin tsabtace alumina mai inci 12 don sarrafa wafer 300mm

    Akwatin injin tsabtace alumina mai inci 12 don sarrafa wafer 300mm

    An ƙera injin tsabtace injin na St.Cera mai inci 12 daidai gwargwado daga alumina mai tsafta mai kashi 99.8% (Al₂O₃) don sarrafa wafer mai girman 300mm. Buck ɗin yana da saman da aka yi wa tsagi mai kyau (faɗin tsagi 0.5–1.0 mm, tsayi 2–3 mm) don tabbatar da rarraba injin tsabtace mai daidai gwargwado a duk faɗin diamita na 300mm. Ana kiyaye shi a cikin 5 μm, wanda ke ba da damar daidaita wafer mara warp yayin yankewa, niƙa a bayan gida, da dubawa. Babban ƙarfin lanƙwasa na kayan (361 MPa) da tauri (16 GPa) suna ba da garantin kwanciyar hankali na dogon lokaci koda a lokacin zagayowar injin tsabtace mai maimaitawa.

  • Mai Inganta Ƙarshen Alumina na Ceramic tare da Tashoshin Vacuum Masu Haɗaka

    Mai Inganta Ƙarshen Alumina na Ceramic tare da Tashoshin Vacuum Masu Haɗaka

    Injin cire kayan alumina na St.Cera yana haɗa hanyoyin cire kayan alumina masu inganci da ramukan tsotsa kai tsaye cikin jikin alumina mai tsafta 99.8%. Wannan ƙirar tana kawar da kushin injin na waje, wanda ke ba da damar ɗaukar wafer kai tsaye tare da ƙarfin riƙewa iri ɗaya. Babban ƙarfin lanƙwasa na kayan (361 MPa) da tauri (16 GPa) suna tabbatar da kwanciyar hankali na dogon lokaci a ƙarƙashin zagayowar injin. Ana kiyaye lanƙwasa a faɗin yankin injin a cikin 10 μm, yana hana damuwa da karyewar wafer. Tashoshin injin suna nan a flange na hawa na baya don sauƙin haɗawa da hannun robot na OEM.

  • Sassan yumbu na ESD-Amintaccen Alumina don Kula da Wafer Mai Sauƙi

    Sassan yumbu na ESD-Amintaccen Alumina don Kula da Wafer Mai Sauƙi

    An ƙera sassan yumbu na St.Cera ESD (electrostatic discharge) masu aminci daga Al₂O₃ mai ƙarfi 99.8% tare da juriyar saman da aka keɓance na 10⁶–10⁹ Ω/sq, wanda aka samu ta hanyar amfani da doping ko shafi na musamman. Waɗannan sassan suna wargaza cajin da ba ya canzawa yadda ya kamata, suna hana lalacewar electrostatic ga wafers da na'urori masu laushi na semiconductor. Kayan tushe yana riƙe da ƙarfin lanƙwasa mai girma (361 MPa), tauri (16 GPa), da ƙarfin dielectric (15×10⁶ V/m). Sassan yumbu masu aminci na ESD sun haɗa da masu tasiri na ƙarshe, fil ɗin ɗagawa, dogayen jagora, da kayan haɗin musamman don sarrafa FAB.

  • Kayayyakin Kayayyakin Yumbu don Kayan Aikin Binciken Semiconductor

    Kayayyakin Kayayyakin Yumbu don Kayan Aikin Binciken Semiconductor

    An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.

    An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.

  • Mai ɗaukar kayan aikin Semiconductor na farantin yumbu

    Mai ɗaukar kayan aikin Semiconductor na farantin yumbu

    An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.

    An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.

  • Kayan Aikin Semiconductor na Kayayyakin Kayayyakin Yumbu

    Kayan Aikin Semiconductor na Kayayyakin Kayayyakin Yumbu

    An ƙirƙira shi ta hanyar matsi mai sanyi da kuma niƙa a ƙarƙashin zafin jiki mai yawa, sannan a gyara shi da kuma goge shi, kayan aikin yumbu na iya biyan duk wani ƙa'ida mai tsauri na kayan aikin semiconductor tare da fasalulluka na juriya ga lalacewa, juriya ga tsatsa, ƙarancin faɗaɗa zafi, da kuma rufin rufi. Yumbu na iya aiki a cikin nau'ikan kayan aikin samar da semiconductor iri-iri tare da yanayin zafi mai yawa, iskar gas ko iskar gas mai lalata na dogon lokaci.

    An yi shi da foda mai tsabta na alumina, wanda aka sarrafa ta hanyar matsi mai sanyi, sintering mai zafi da kammalawa daidai, zai iya kaiwa ga juriyar girma zuwa ±0.001 mm, kammala saman Ra 0.1, juriyar zafin jiki 1600℃.

  • Zoben Hatimin Alumina Mai Tsabta Mai Tsabta don Hatimin Ɗakin Zafi Mai Zafi

    Zoben Hatimin Alumina Mai Tsabta Mai Tsabta don Hatimin Ɗakin Zafi Mai Zafi

    An tsara zoben hatimin St.Cera a matsayin madadin zoben O-polymer a cikin mawuyacin yanayi inda elastomers ke lalacewa. An ƙera shi daga alumina mai tsafta mai ƙarfi 99.8% (Al₂O₃), ana amfani da wannan zoben hatimi mai tauri a aikace-aikacen hatimin tsaye - yawanci an haɗa shi da gasket mai laushi na ƙarfe ko graphite - don samar da ingantaccen ɗaukar iskar gas ko iskar gas a yanayin zafi har zuwa 800°C da kuma a cikin yanayin plasma ko sinadarai masu ƙarfi. Kayan yana ba da iskar gas mara fitarwa, ƙarfin matsi mai yawa (ƙarfin lanƙwasa na ƙarƙashin ƙasa 361 MPa), da rashin kuzarin sinadarai (mai jure wa halogens, acid, da alkalis banda HF). Fuskokin hatimin da aka daidaita (faɗi ≤5 μm, ƙaiƙayin saman Ra ≤0.2 μm) suna tabbatar da cewa suna haɗuwa da ƙarfe ko kayan yumbu.

  • Zoben Mai Tsabta na Alumina Chamber Mai Tsabta don Tsarin Plasma Etch & CVD

    Zoben Mai Tsabta na Alumina Chamber Mai Tsabta don Tsarin Plasma Etch & CVD

    Zoben mayar da hankali na ɗakin St.Cera wani muhimmin kayan aiki ne da ake amfani da shi a cikin kayan aikin plasma etch, CVD, da PVD semiconductor. An ƙera shi daga 99.8% alumina mai tsabta (Al₂O₃), zoben yana kewaye gefen wafer don iyakance plasma da inganta rarrabawar kusurwar ion, ta haka yana inganta daidaiton etch a saman wafer. Kayan yana ba da juriya na plasma na musamman, ƙarfin dielectric mai girma (15×10⁶ V/m), da kwanciyar hankali na zafi har zuwa 1600°C, yana tabbatar da aminci na dogon lokaci a cikin yanayin plasma mai ƙarfi na fluorine ko chlorine. ID/OD mai daidaito da lanƙwasa (≤10 μm) yana ba da damar daidaita gefen wafer, rage lahani na gefen da samar da barbashi.

  • Zoben yumbu na Alumina Mai Tsabta Mai Kyau don Dakunan Tsarin CVD / PVD

    Zoben yumbu na Alumina Mai Tsabta Mai Kyau don Dakunan Tsarin CVD / PVD

    Zoben yumbu na St.Cera an ƙera shi musamman don amfani a cikin ɗakunan sarrafa CVD (Sinadarin Turare) da PVD (Physical Vapor Deposition). An ƙera shi daga 99.8% na alumina mai tsarki (Al₂O₃), wannan zoben yana aiki azaman layin ɗakin, zoben mayar da hankali, ko kayan aikin sarrafawa don iyakance plasma da kare bangon ɗakin daga zaizayar ƙasa. Kayan yana ba da kyakkyawan juriya ga plasma, ƙarfin dielectric mai yawa (15×10⁶ V/m), da kwanciyar hankali na zafi har zuwa 1600°C, yana tabbatar da tsawon rai a cikin yanayin plasma mai ƙarfi na fluorine. Daidaitaccen haƙurin girma (±0.05 mm akan ID/OD) da lanƙwasa (≤10 μm) yana ba da damar daidaita matsayin gefen wafer, yana inganta daidaiton ajiya da rage samar da barbashi.

  • Bernoulli Ceramic Effect Effect — Kula da Wafer mara taɓawa don Wafers masu siriri da rauni

    Bernoulli Ceramic Effect Effect — Kula da Wafer mara taɓawa don Wafers masu siriri da rauni

    Na'urar St.Cera's Bernoulli ceramic end effector tana amfani da iskar gas don sarrafa wafers ba tare da taɓawa ta jiki ba. An ƙera ta daga alumina mai tsarki 99.8% (Al₂O₃) ko silicon carbide (SiC), tana da bututun ƙarfe masu inganci waɗanda ke fitar da iskar gas mai matsi don ƙirƙirar fim ɗin iska mai siriri tsakanin na'urar ƙarewa da wafer. Wannan ƙa'idar da ba ta taɓawa ba tana kawar da gurɓataccen gefen baya, guntuwar gefen, da lalacewar saman, wanda hakan ya sa ya dace da wafers masu siriri (≤100 μm), masu rauni, ko masu lanƙwasa. Na'urar yumbu tana ba da ƙarfin lanƙwasa mai yawa (361 MPa don Al₂O₃; har zuwa 550–600 MPa don SiC), ƙarancin nauyi, da kwanciyar hankali mai kyau, yana tabbatar da matsayi mai maimaitawa a cikin robots masu canja wurin wafer mai sauri.