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Ka Hana Maʻamau o Al2O3 Ceramic Wafer Chuck
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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Papa Seramika Lako Semiconductor i Hoʻopilikino ʻia ʻo ST.CERA
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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12-'Īniha Alumina Vacuum Chuck no ka hana ʻana i ka wafer 300mm
Ua hana ʻia ka mīkini hoʻomaʻemaʻe 12-'īniha a St.Cera me ka pololei mai ka 99.8% alumina maʻemaʻe kiʻekiʻe (Al₂O₃) no ka lawelawe ʻana i ka wafer 300mm. Loaʻa i ka mīkini kahi ʻili maikaʻi me nā grooves (ka laulā o ke groove 0.5–1.0 mm, pitch 2–3 mm) e hōʻoia i ka hoʻolaha like ʻana o ka vacuum ma ke anawaena holoʻokoʻa 300mm. Mālama ʻia ka pālahalaha i loko o 5 μm, e hiki ai ke hoʻopaʻa ʻia ka wafer me ka ʻole o ka warp i ka wā e dicing ai, wili ʻana i ka ʻaoʻao hope, a me ka nānā ʻana. ʻO ka ikaika flexural kiʻekiʻe o ka mea (361 MPa) a me ka paʻakikī (16 GPa) e hōʻoia i ka paʻa o ka dimensional no ka manawa lōʻihi ma lalo o nā pōʻaiapuni vacuum pinepine.
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ʻO ka mea hoʻopau hopena keramika Alumina me nā kahawai Vacuum i hoʻohui ʻia
Hoʻohui ka mea hoʻoheheʻe hopena alumina a St.Cera i nā kahawai vacuum i hana pololei ʻia a me nā lua omo pololei i loko o ke kino alumina maʻemaʻe 99.8%. Hoʻopau kēia hoʻolālā i nā pads vacuum waho, e hiki ai ke kiʻi pololei i ka wafer me ka ikaika paʻa like. ʻO ka ikaika flexural kiʻekiʻe o ka mea (361 MPa) a me ka paʻakikī (16 GPa) e hōʻoia i ka paʻa lōʻihi o ka dimensional ma lalo o nā pōʻaiapuni vacuum i hana hou ʻia. Mālama ʻia ka pālahalaha ma ka ʻāpana pad i loko o 10 μm, e pale ana i ke kaumaha wafer a me ka haki ʻana. Aia nā awa vacuum ma ka flange hoʻopaʻa hope no ka hoʻohui maʻalahi me nā lima robot OEM.
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Nā ʻāpana seramika Alumina palekana ESD no ka lawelawe ʻana i ka wafer Static-Sensitive
Hana ʻia nā ʻāpana keramika alumina palekana ESD (electrostatic discharge) a St.Cera mai 99.8% Al₂O₃ kiʻekiʻe me kahi resistivity ʻili i hana kūikawā ʻia o 10⁶–10⁹ Ω/sq, i hoʻokō ʻia ma o kahi kaʻina hana doping a i ʻole ka uhi ʻana. Hoʻopau maikaʻi kēia mau ʻāpana i ka hoʻouka static, e pale ana i ka hōʻino electrostatic i nā wafers semiconductor koʻikoʻi a me nā mea hana. Mālama ka mea kumu i kona ikaika flexural kiʻekiʻe (361 MPa), paʻakikī (16 GPa), a me ka ikaika dielectric (15 × 10⁶ V/m). ʻO nā ʻāpana keramika palekana ESD e komo pū me nā hopena hopena, nā pine hāpai, nā ala alakaʻi, a me nā mea paʻa maʻamau no ka automation FAB.
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Nā ʻāpana hoʻokaʻawale seramika no nā lako hana Semiconductor Probe
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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Mea lawe lako Semiconductor papa seramika
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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Nā ʻāpana seramika lako Semiconductor
Hoʻokumu ʻia e ke kaomi isostatic anu a sintered ma lalo o ke ana wela kiʻekiʻe, a laila mīkini pololei a hoʻopili ʻia, hiki i nā ʻāpana ʻokoʻa seramika ke hoʻokō i nā koi koʻikoʻi o nā lako semiconductor me kona mau hiʻohiʻona o ke kūpaʻa ʻana i ka ʻaʻahu, ke kūpaʻa ʻana i ka palaho, ka hoʻonui wela haʻahaʻa, a me ka insulation. Hiki i nā seramika ke hana i nā ʻano lako hana semiconductor me ke kūlana o ke ana wela kiʻekiʻe, ka vacuum a i ʻole ke kinoea corrosive no ka manawa lōʻihi.
Hana ʻia mai ka pauka alumina maʻemaʻe kiʻekiʻe, i hana ʻia e ke kaomi isostatic anu, ka sintering wela kiʻekiʻe a me ka hoʻopau pololei, hiki iā ia ke hōʻea i ka hoʻomanawanui ana i ka ± 0.001 mm, ka hoʻopau ʻana o ka ʻili Ra 0.1, ke kūpaʻa mahana 1600 ℃.
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Apo Sila Seramika Alumina Maʻemaʻe Kiʻekiʻe no ke Sila ʻana o ke Keʻena Mahana Kiʻekiʻe
Ua hoʻolālā ʻia ke apo sila keramika a St.Cera ma ke ʻano he koho ʻē aʻe i nā apo O-polymer i nā wahi koʻikoʻi kahi e hōʻino ai nā elastomers. Hana ʻia mai ka 99.8% alumina maʻemaʻe kiʻekiʻe (Al₂O₃), hoʻohana ʻia kēia apo sila paʻa i nā noi sila static - i hui pū ʻia me kahi metala palupalu a i ʻole gasket graphite - e hāʻawi i ka vacuum hilinaʻi a i ʻole ka paʻa kinoea ma nā mahana a hiki i 800°C a ma nā wahi plasma a i ʻole nā kemika. Hāʻawi ka mea i ka ʻole o ka outgassing, ka ikaika compressive kiʻekiʻe (ka ikaika flexural ma lalo 361 MPa), a me ka inertness kemika (kū i nā halogens, nā waikawa, a me nā alkalis koe wale nō HF). ʻO nā ʻili sila i hoʻopaʻa ʻia me ka pololei (flatness ≤5 μm, surface roughness Ra ≤0.2 μm) e hōʻoia i ka pili paʻa ʻana me nā metala pili a i ʻole nā mea keramika.
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ʻO ke apo hoʻoikaika kino o ke keʻena Alumina maʻemaʻe kiʻekiʻe no nā ʻōnaehana Plasma Etch & CVD
ʻO ke apo hoʻoikaika lumi o St.Cera kahi ʻāpana hana koʻikoʻi i hoʻohana ʻia i nā lako etch plasma, CVD, a me PVD semiconductor. Hana ʻia mai ka 99.8% alumina maʻemaʻe kiʻekiʻe (Al₂O₃), hoʻopuni ke apo i ka lihi wafer e hoʻopaʻa i ka plasma a hoʻonui i ka hoʻolaha ʻana o ka ion angular, no laila e hoʻomaikaʻi ana i ka like ʻana o ka etch ma ka ʻili wafer. Hāʻawi ka mea i ke kū'ē plasma kūikawā, ka ikaika dielectric kiʻekiʻe (15 × 10⁶ V / m), a me ke kūpaʻa wela a hiki i 1600 ° C, e hōʻoiaʻiʻo ana i ka hilinaʻi lōʻihi i nā wahi plasma fluorine- a i ʻole chlorine. ʻO ka ID/OD honua pololei a me ka palahalaha (≤10 μm) e hiki ai ke hoʻonohonoho pololei i ka lihi wafer, e hōʻemi ana i nā hemahema lihi a me ka hanauna ʻāpana.
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Apo Seramika Alumina Maʻemaʻe Kiʻekiʻe no nā Keʻena Hana CVD / PVD
Ua hoʻolālā kūikawā ʻia ke apo keramika a St.Cera no ka hoʻohana ʻana i loko o nā keʻena hana CVD (Chemical Vapor Deposition) a me PVD (Physical Vapor Deposition). Hana ʻia mai ka 99.8% alumina maʻemaʻe kiʻekiʻe (Al₂O₃), lawelawe kēia apo ma ke ʻano he liner keʻena, apo focus, a i ʻole ka ʻāpana kit hana e hoʻopaʻa i ka plasma a pale i nā paia o ke keʻena mai ka erosion. Hāʻawi ka mea i ke kūpaʻa plasma maikaʻi loa, ka ikaika dielectric kiʻekiʻe (15 × 10⁶ V/m), a me ke kūpaʻa wela a hiki i 1600 °C, e hōʻoiaʻiʻo ana i ke ola lawelawe lōʻihi i nā wahi plasma fluorine-based aggressive. ʻO nā hoʻomanawanui dimensional pololei (± 0.05 mm ma ID/OD) a me ka flatness (≤10 μm) e hiki ai ke hoʻonohonoho mau i ka lihi wafer, e hoʻomaikaʻi ana i ka like ʻana o ka deposition a me ka hōʻemi ʻana i ka hanauna ʻāpana.
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ʻO Bernoulli Ceramic End Effector — Ka lawelawe ʻana i ka Wafer Non-Contact no nā Wafers Lahilahi a Palupalu
Hoʻohana ka mea hoʻokō hopena keramika Bernoulli a St.Cera i ka hāpai aerodynamic e lawelawe i nā wafers me ka ʻole o ka hoʻopili kino. Hana ʻia mai ka 99.8% alumina (Al₂O₃) a i ʻole silicon carbide (SiC) maʻemaʻe kiʻekiʻe, hōʻike ia i nā nozzles mīkini kikoʻī e hoʻokuke i ke kinoea i hoʻopaʻa ʻia e hana i kahi ʻili ea lahilahi ma waena o ka mea hoʻokō hopena a me ka wafer. Hoʻopau kēia kumumanaʻo pili ʻole i ka haumia ma hope, ka ʻoki ʻana o ka lihi, a me ka hōʻino ʻana o ka ʻili, e kūpono ia no nā wafers lahilahi (≤100 μm), palupalu, a i ʻole nā wafers warped. Hāʻawi ka substrate keramika i ka ikaika flexural kiʻekiʻe (361 MPa no Al₂O₃; a hiki i 550-600 MPa no SiC), ka nuipa haʻahaʻa, a me ke kūpaʻa dimensional maikaʻi loa, e hōʻoia ana i ke kūlana hana hou ʻia i nā robots hoʻoili wafer wikiwiki kiʻekiʻe.
