ibhena_yephepha

Iimveliso

  • Iidiski ze-Alumina Ceramic ezinobunyulu obuphezulu

    Iidiski ze-Alumina Ceramic ezinobunyulu obuphezulu

    Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.

    Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.

  • ingalo yodongwe lwe-alumina

    ingalo yodongwe lwe-alumina

    Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.

    Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.

  • Iiringi zokufaka iCeramic Iiringi zokugxila zeCeramic

    Iiringi zokufaka iCeramic Iiringi zokugxila zeCeramic

    Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.

    Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.

  • Ukhuseleko lokukhusela indandatho ye-ST.CERA Alumina Ceramic Clamp Ring

    Ukhuseleko lokukhusela indandatho ye-ST.CERA Alumina Ceramic Clamp Ring

    Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.

    Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.

  • Ingalo yeRobhothi yeAlumina Ceramic ecocekileyo ephezulu yokuphatha iWafer

    Ingalo yeRobhothi yeAlumina Ceramic ecocekileyo ephezulu yokuphatha iWafer

    Ingalo yerobhothi ye-alumina ceramic yaseSt.Cera yenziwe ngokuchanekileyo nge-99.8% ye-Al₂O₃ (i-alumina) ecocekileyo kakhulu. Idibanisa amandla angaqhelekanga okugoba (361 MPa), ubunzima obuphezulu (16 GPa), kunye noxinano oluphantsi (3.93 g/cm³), nto leyo ebangela ukuba ingalo ibe lula kodwa iqine ukuze kudluliselwe i-wafer ye-semiconductor. I-coefficient yokwandiswa kobushushu bezinto (7.2×10⁻⁶/°C) ihambelana ne-silicon ngokusondeleyo, nto leyo enciphisa ukungalingani kobushushu ngexesha lokucubungula.

  • Iinxalenye zeCeramic zeAlumina eziBalaseleyo zeCeramic Ring

    Iinxalenye zeCeramic zeAlumina eziBalaseleyo zeCeramic Ring

    Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.

    Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.

  • Izixhobo zeSemiconductor ezenziwe ngokwezifiso zeST.CERA IiChucks zeCeramic

    Izixhobo zeSemiconductor ezenziwe ngokwezifiso zeST.CERA IiChucks zeCeramic

    Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.

    Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.

  • I-Silicon Carbide (SiC) Ceramic End Effector – Ukuqina Okuphezulu Kokuphatha I-Wafer Enobushushu Obuphezulu

    I-Silicon Carbide (SiC) Ceramic End Effector – Ukuqina Okuphezulu Kokuphatha I-Wafer Enobushushu Obuphezulu

    I-St.Cera's SiC ceramic end effector yenziwe nge-silicon carbide ecocekileyo kakhulu (umxholo weSiC 99.72%, i-Si yamahhala 0.05%) kusetyenziswa izinto zebhetshi ye-S1111. Inika iipropati ezibalaseleyo zoomatshini: amandla e-flexural 449 MPa (elinganisiweyo), i-elastic modulus 457 GPa (elinganisiweyo), kunye nobunzima beVickers 25–28 GPa (eqhelekileyo). Uxinano oluphantsi (3.10–3.15 g/cm³, eqhelekileyo) lubonelela ngokuqina okuphezulu, okufanelekileyo kwiirobhothi zokudlulisa i-wafer ezikhawulezayo. Ngokuqhuba kobushushu obuyi-120–150 W/m·K (eqhelekileyo) kunye ne-thermal expansion coefficient ye-4.0–4.5×10⁻⁶/℃ (eqhelekileyo), le effector yokugqibela isusa ubushushu ngempumelelo kwaye igcina uzinzo olulinganayo ngexesha lokuphathwa kobushushu obuphezulu (ukuya kuthi ga kwi-1600–1700°C, akukho mthwalo). Umbala omnyama/ongwevu kunye nokufunxwa kwamanzi okungekho kuqinisekisa ukuhambelana kwegumbi lokucoca.

  • I-Silicon Carbide (SiC) Based Vacuum Chuck yoBushushu obuphezulu kunye neendawo zePlasma

    I-Silicon Carbide (SiC) Based Vacuum Chuck yoBushushu obuphezulu kunye neendawo zePlasma

    I-St.Cera's SiC-based ceramic chuck yenziwe nge-silicon carbide ecocekileyo kakhulu (i-batch S1111, i-SiC 99.72%, i-Si yamahhala 0.05%). Inika amandla okugoba alinganisiweyo angama-449 MPa, ubunzima bokuqhekeka obuyi-3.12 MPa·m¹/², kunye ne-elastic modulus engama-457 GPa. Ukuqhuba kobushushu obuqhelekileyo bezinto (120–150 W/m·K) kunye nokwanda kobushushu obuphantsi (4.0–4.5×10⁻⁶/℃) kuvumela ukurhawuzelelwa kobushushu ngokukhawuleza kunye nokugoba okuncinci kwe-wafer ngexesha lokujikeleza kobushushu. I-chuck ingacwangciswa njenge-vacuum chuck enemingxuma (ukuhamba kwegesi efanayo) okanye i-grooved standard chuck. Ngobushushu obuphezulu bokusetyenziswa obuyi-1600–1700°C (akukho mthwalo) kunye nokumelana nokukhukuliseka kweplasma okugqwesileyo, le chuck ifanelekile kwi-processing ye-wafer yobushushu obuphezulu (i-annealing, i-RTP) kunye nee-aggressive etch chambers apho ii-alumina chucks ziwohloka khona.

  • Izixhobo zeSemiconductor Izixhobo zeCeramic Spare Parts Ceramic Carriers

    Izixhobo zeSemiconductor Izixhobo zeCeramic Spare Parts Ceramic Carriers

    Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.

    Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.

  • Indandatho Yokugaya ye-Alumina Ceramic Exhaswe Ngesinyithi kwiZicelo zokuLapha eziQinisekileyo

    Indandatho Yokugaya ye-Alumina Ceramic Exhaswe Ngesinyithi kwiZicelo zokuLapha eziQinisekileyo

    Indandatho yokugaya ye-alumina esekwe kwisinyithi yaseSt.Cera idibanisa umaleko wokugquma we-alumina ococekileyo kakhulu (99.8% Al₂O₃) kunye nesiseko sesinyithi esenziwe ngomatshini (ngesiqhelo i-aluminium okanye intsimbi engatyiwayo). Olu yilo lwe-hybrid lubonelela ngokumelana nokuguguleka okungaqhelekanga kunye nokungasebenzi kakuhle kweekhemikhali ze-ceramic kumphezulu wokugquma, ngelixa isiseko sesinyithi songeza amandla oomatshini, ukufakwa lula, kunye nokumelana nokuqhekeka okubuthathaka. Umaleko we-alumina unika amandla okuguguleka angama-361 MPa, ubunzima beVickers obuyi-16 GPa, kunye nokuzinza kobushushu ukuya kuthi ga kwi-800°C. Isiseko sesinyithi senziwe ngokwezifiso ngemingxunya yokugquma, iiphini zokufumana, okanye iimpawu zemagnethi zokudityaniswa koomatshini bokugquma, iigrinder zeplanethi, kunye nezixhobo ze-CMP.

  • Izixhobo zeCeramic zeSemiconductor Probe Station Equipment

    Izixhobo zeCeramic zeSemiconductor Probe Station Equipment

    Zenziwe ngokucinezela okubandayo kwe-isostatic kwaye zitshiswe phantsi kobushushu obuphezulu, emva koko zenziwe ngomatshini kwaye zipolishwe ngokuchanekileyo, iindawo ezingasetyenziswayo zeseramikhi zinokuhlangabezana nazo naziphi na iimfuno ezingqongqo zezixhobo ze-semiconductor kunye neempawu zazo zokuxhathisa ukuguguleka, ukumelana nokugqwala, ukwanda okuphantsi kobushushu, kunye nokufakelwa. Iiseramikhi zinokusebenza kwiintlobo ezininzi zezixhobo zemveliso ye-semiconductor ezinemeko yobushushu obuphezulu, i-vacuum okanye igesi erhabaxa ixesha elide.

    Yenziwe ngomgubo we-alumina ococekileyo kakhulu, icutshungulwa ngokucinezela okubandayo kwe-isostatic, ukunyibilikisa ubushushu obuphezulu kunye nokugqitywa ngokuchanekileyo, inokufikelela kumlinganiselo wokunyamezela ukuya kwi-±0.001 mm, ukugqitywa komphezulu yi-Ra 0.1, ukumelana nobushushu yi-1600℃.