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Saxannada dhoobada Alumina oo leh Nadiifin Sare
Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.
Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.
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gacan dhoobo alumini ah
Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.
Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.
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Giraangiraha Dahaarka Dhoobada Siddooyinka Diiradda Dhoobada
Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.
Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.
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Ilaalinta Giraanta Xakameynta Dhoobada ee ST.CERA Alumina
Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.
Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.
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Gacanta Robot-ka Dhoobada ee Alumina ee Nadiifka Sare leh ee Maareynta Wafer-ka
Gacanta robot-ka dhoobada ah ee alumina ee St.Cera waxaa si sax ah loogu farsameeyay 99.8% saafinimo sare leh oo Al₂O₃ (alumina). Waxay isku daraysaa xoog dabacsan oo aan caadi ahayn (361 MPa), adkeysi sare (16 GPa), iyo cufnaan hoose (3.93 g/cm³), taasoo keentay gacan fudud oo adag oo loogu talagalay wareejinta wafer semiconductor-ka. Isku-dhafka ballaarinta kulaylka ee walxaha (7.2×10⁻⁶/°C) si dhow ayuu ula jaanqaadaa silicon, taasoo yaraynaysa is-waafajinta kulaylka inta lagu jiro farsamaynta.
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Qaybaha Dhoobada ee Alumina ee Saxnaanta Sare leh ee Giraanta Dhoobada
Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.
Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.
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Qalabka Semiconductor-ka ee gaarka loo leeyahay ee ST.CERA Chucks-ka dhoobada ah
Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.
Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.
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Waxyeelaha Dhamaadka Dhoobada ee Silicon Carbide (SiC) - Adkayn Sare oo loogu talagalay Maareynta Wafer Heerkulka Sare
Qalabka wax soo saarka dhammaadka dhoobada ee St.Cera's SiC waxaa laga sameeyay carbide silicon saafi ah (SiC content 99.72%, Si bilaash ah 0.05%) iyadoo la adeegsanayo walxaha dufcadda S1111. Waxay bixisaa sifooyin farsamo oo heer sare ah: xoogga dabacsanaanta 449 MPa (la cabbiray), modulus dabacsanaan 457 GPa (la cabbiray), iyo adkaanta Vickers 25-28 GPa (caadiga ah). Cufnaanta hoose (3.10-3.15 g/cm³, caadiga ah) waxay bixisaa adkaansho gaar ah oo sare, oo ku habboon robotyada wareejinta wafer-ka xawaaraha sare leh. Iyada oo leh hab-dhaqan kuleyl oo ah 120-150 W/m·K (caadiga ah) iyo isku-darka ballaarinta kulaylka ee 4.0-4.5 × 10⁻⁶/℃ (caadiga ah), qalabkan dhammaadka ah si wax ku ool ah ayuu u kala firdhiyaa kulaylka wuxuuna ilaaliyaa xasilloonida cabbirka inta lagu jiro maaraynta heerkulka sare (ilaa 1600-1700°C, ma jiro culays). Midabka madow/cawlan iyo nuugista biyaha eber waxay hubinayaan iswaafajinta qolka nadiifka ah.
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Jaakad faakiyuum ah oo ku salaysan Silicon Carbide (SiC) oo loogu talagalay Heerkulka Sare iyo Deegaannada Balaasmaha
Qalabka dhoobada ah ee ku salaysan St.Cera ee SiC waxaa laga sameeyay carbide silicon ah oo saafi ah (dufcad S1111, SiC 99.72%, Si bilaash ah 0.05%). Waxay bixisaa xoog dabacsan oo la cabbiray oo ah 449 MPa, adkaanta jabka oo ah 3.12 MPa·m¹/², iyo modules dabacsan oo ah 457 GPa. Qabsashada kulaylka caadiga ah ee walaxda (120–150 W/m·K) iyo ballaarinta kulaylka oo hooseysa (4.0–4.5×10⁻⁶/℃) waxay suurtogal ka dhigaysaa kor u kaca heerkulka degdega ah iyo warpage yar oo wafer ah inta lagu jiro wareegga kulaylka. Qalabka waxaa loo habeyn karaa sidii qalab faakiyuum ah oo daloolsan (socodka gaaska oo isku mid ah) ama qalab caadi ah oo godad leh. Iyada oo leh heerkul isticmaal ugu badan oo ah 1600–1700°C (rarid la'aan) iyo iska caabin nabaad-guurka plasma oo aan caadi ahayn, qalabkani wuxuu ku habboon yahay farsamaynta wafer heerkulka sare (annealing, RTP) iyo qolal xoqan oo qallafsan halkaas oo walxaha alumina ay hoos u dhacaan.
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Qalabka Semiconductor-ka Qaybaha Dayactirka Dhoobada ah ee Sideyaasha Dhoobada
Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.
Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.
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Giraangiraha Shiidida Dhoobada ee Alumina ee Birta ah ee loogu talagalay Codsiyada Daloolinta Adkaanta Sare
Giraangiraha shiidi kara alumina ee birta ku salaysan ee St.Cera wuxuu isku daraa lakab dhoobo ah oo saafi ah (99.8% Al₂O₃) oo leh bir bir ah oo si sax ah loo farsameeyay (badanaa aluminium ama bir aan miridh lahayn). Naqshaddan isku-dhafka ah waxay bixisaa iska caabin heer sare ah oo xirasho iyo firfircooni la'aan kiimiko ah oo dhoobada ah oo ku taal dusha sare ee shiidi, halka saldhigga birta uu ku daro xoog farsamo, rakibid fudud, iyo iska caabin jab jab ah. Lakabka alumina wuxuu bixiyaa xoog dabacsan oo ah 361 MPa, adkaanta Vickers ee 16 GPa, iyo xasilloonida kulaylka ilaa 800°C. Saldhigga birta waxaa loo habeeyey godad rakiban, biinanka meelaynta, ama sifooyinka birlabta si loogu daro mashiinnada duubista, shiidiyeyaasha meeraha, iyo qalabka CMP.
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Qaybaha Dayactirka Dhoobada ee Qalabka Saldhigga Baaritaanka Semiconductor
Iyada oo lagu sameeyay cadaadis qabow oo isostatic ah oo lagu dhex shubay heerkul sare, ka dibna si sax ah loo farsameeyay oo loo safeeyey, qaybaha dayactirka dhoobada ah waxay buuxin karaan shuruudaha adag ee qalabka semiconductor-ka iyadoo leh astaamo u gaar ah iska caabbinta xirashada, iska caabbinta daxalka, ballaarinta kulaylka oo hooseeya, iyo dahaarka. Dhoobada waxay ka shaqayn kartaa noocyo badan oo qalabka wax soo saarka semiconductor-ka ah oo leh heerkul sare, faakiyuum ama gaas daxalaysan muddo dheer.
Waxaa laga sameeyay budada alumina saafi ah oo sareysa, oo lagu farsameeyay cadaadis isostatic qabow, sintering heerkul sare iyo dhammaystir sax ah, waxay gaari kartaa dulqaad cabbir ilaa ± 0.001 mm, dhammaystirka dusha sare Ra 0.1, iska caabbinta heerkulka 1600℃.
