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Amadiski e-Alumina Ceramic anobumsulwa obuphezulu
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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ingalo yobumba ye-alumina
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Izindandatho Zokufaka Izinto Zobumba Amasongo Okugxila Ebumba
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Ukuvikelwa Kokufakwa Kwendandatho Yesivikelo Se-ST.CERA Alumina Ceramic Clamp
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Ingalo Yerobhothi Le-Alumina Ceramic Elihlanzekile Kakhulu Lokuphathwa Kwe-Wafer
Ingalo yerobhothi ye-alumina ceramic kaSt.Cera yenziwe ngokunemba kusuka ku-99.8% i-Al₂O₃ (i-alumina) ehlanzekile kakhulu. Ihlanganisa amandla angavamile okugobeka (361 MPa), ubulukhuni obuphezulu (16 GPa), kanye nobuningi obuphansi (3.93 g/cm³), okuholela engalweni elula kodwa eqinile yokudluliselwa kwe-wafer ye-semiconductor. I-coefficient yokwanda kokushisa kwezinto (7.2×10⁻⁶/°C) ifana ne-silicon eduze, inciphisa ukungalingani kokushisa ngesikhathi sokucubungula.
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Izingxenye ze-Ceramic ze-Alumina High-Precision Ceramic Ring Ceramic
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Imishini Ye-Semiconductor Eyenziwe Ngokwezifiso ye-ST.CERA Ama-Ceramic Chucks
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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I-Silicon Carbide (SiC) Ceramic End Effector – Ukuqina Okuphezulu Kokuphathwa Kwe-Wafer Esezingeni Lokushisa Eliphezulu
I-St.Cera's SiC ceramic end effector yenziwe nge-silicon carbide emsulwa kakhulu (okuqukethwe kwe-SiC okungu-99.72%, i-Si yamahhala engu-0.05%) kusetshenziswa izinto ze-batch ze-S1111. Inikeza izakhiwo ezihlukile zomshini: amandla okuguquguquka angu-449 MPa (alinganisiwe), i-modulus elastic engu-457 GPa (alinganisiwe), kanye nobunzima be-Vickers obungu-25–28 GPa (okuvamile). Ubuningi obuphansi (3.10–3.15 g/cm³, okuvamile) bunikeza ukuqina okuphezulu, okulungele amarobhothi okudlulisa i-wafer asheshayo. Ngokushisa okungu-120–150 W/m·K (okuvamile) kanye ne-coefficient yokwandisa ukushisa engu-4.0–4.5×10⁻⁶/℃ (okuvamile), le effector iqeda ukushisa ngempumelelo futhi igcina ukuzinza kobukhulu ngesikhathi sokuphathwa kokushisa okuphezulu (kufika ku-1600–1700°C, akukho mthwalo). Umbala omnyama/ompunga kanye nokumuncwa kwamanzi okungekho kuqinisekisa ukuhambisana kwegumbi lokuhlanza.
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I-Silicon Carbide (SiC) Esekelwe ku-Vacuum Chuck Yezindawo Ezishisa Kakhulu Nezishisayo Ze-Plasma
I-St.Cera's SiC-based ceramic chuck yenziwe nge-silicon carbide ehlanzekile kakhulu (i-batch S1111, i-SiC 99.72%, i-Si yamahhala engu-0.05%). Inikeza amandla okuguquguquka alinganisiwe angu-449 MPa, ukuqina kokuphuka okungu-3.12 MPa·m¹/², kanye ne-elastic modulus engu-457 GPa. Ukushisa okuvamile kwezinto ezibonakalayo (120–150 W/m·K) kanye nokwanda okuphansi kokushisa (4.0–4.5×10⁻⁶/℃) kuvumela ukusheshisa okusheshayo kanye ne-wafer warpage encane ngesikhathi sokujikeleza kokushisa. I-chuck ingalungiswa njenge-vacuum chuck enezimbobo (ukugeleza kwegesi okufanayo) noma i-chuck ejwayelekile enemiphetho. Njengoba izinga lokushisa eliphezulu lokusetshenziswa lingu-1600–1700°C (akukho mthwalo) kanye nokumelana nokuguguleka kwe-plasma okungavamile, le chuck ilungele ukucubungula i-wafer yokushisa okuphezulu (i-annealing, i-RTP) kanye namakamelo e-aggressive etch lapho ama-alumina chucks ewohloka khona.
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Imishini Ye-Semiconductor Izingxenye Zokungcebeleka Ze-Ceramic Izithwali Ze-Ceramic
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
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Indandatho Yokugaya Ye-Alumina Ceramic Esekelwe Ngensimbi Yezicelo Zokubopha Okuqinile
Indandatho yokugaya i-alumina esekelwe ensimbi kaSt.Cera ihlanganisa ungqimba lokugqokwa kwe-ceramic oluhlanzekile kakhulu (99.8% Al₂O₃) olunesisekelo sensimbi esinomshini oqondile (ngokuvamile i-aluminium noma insimbi engagqwali). Lo mklamo ohlanganisiwe unikeza ukumelana nokugqokwa okungavamile kanye nokungangeni kwamakhemikhali kwe-ceramic endaweni yokugaya, kuyilapho isisekelo sensimbi senezela amandla omshini, ukufakwa okulula, kanye nokumelana nokuqhekeka okuqhekeka. Ungqimba lwe-alumina lunikeza amandla okuguquguquka angu-361 MPa, ubulukhuni be-Vickers obungu-16 GPa, kanye nokuqina kokushisa okufika ku-800°C. Isisekelo sensimbi senziwe ngokwezifiso ngezimbobo zokufaka, izikhonkwane zokuthola, noma izakhiwo zikagesi zokuhlanganiswa emishinini yokubopha, ama-grinder eplanethi, kanye nemishini ye-CMP.
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Izingxenye Ezisele Ze-Ceramic Zemishini Yesiteshi Se-Semiconductor Probe
Yakhiwe ngokucindezela okubandayo kwe-isostatic futhi ishiswe ngaphansi kokushisa okuphezulu, bese ishintshwa ngomshini futhi ipholishwe ngokunemba, izingxenye ezisele ze-ceramic zingahlangabezana nanoma yiziphi izidingo eziqinile zemishini ye-semiconductor ngezici zayo zokumelana nokuguguleka, ukumelana nokugqwala, ukwanda okuphansi kokushisa, kanye nokushisa. I-Ceramics ingasebenza ezinhlotsheni eziningi zemishini yokukhiqiza ye-semiconductor enesimo sokushisa okuphezulu, i-vacuum noma igesi egqwalisayo isikhathi eside.
Yenziwe ngempuphu ye-alumina emsulwa kakhulu, icutshungulwa ngokucindezela okubandayo kwe-isostatic, ukuthungwa kokushisa okuphezulu kanye nokuqedwa ngokunemba, ingafinyelela ukubekezelela ubukhulu kufike ku-±0.001 mm, ukuqeda kobuso i-Ra 0.1, ukumelana nokushisa okungu-1600℃.
